,
1 | ʻO ka nui o ke kaomi hana 20.6 Mpa. |
2 | Max.ʻO ka mahana hana 204 ℃ (Ke kiʻekiʻe o ka mahana wela a hiki i 454 ℃, i kēia manawa ua hoʻololi ʻia ka mea hoʻopaʻa me ka graphite hoʻonui) |
3 | Pūnaehana kānana Hiki ke hoʻohana ʻia nā mea hoʻohaumia ʻāpana, nā kinoea, nā wai. |
4 | Kuhiliʻole kila pauda metallurgy sintered kānana kānana pololei 2μm ~ 40μm |
5 | Kāhea kānana 1x 10 -6~1×10-2L/min.knm2.pa |
6 | Hiki ke hoʻololi ke kānana. |
Nā hiʻohiʻona huahana o kānana
1 | Ka laulā noi ākea, kahe kahe mai 15 a 300SL / min. |
2 | Loaʻa iā ia ka hoʻohālikelike maikaʻi me nā kinoea kaʻina semiconductor maʻemaʻe kiʻekiʻe. |
3 | Mālama ʻo 3 nanoparticle filtration hiki ke kahe kiʻekiʻe a me ka hāʻule liʻiliʻi liʻiliʻi. |
4 | Hiki i ka 5Ra electropolished surface ke pale i ka haumia o loko. |
5 | E hoʻomoʻa me ka naikokene wela ma hope o ka wai deionized e hoʻokō i nā kūlana hana semiconductor. |
6 | 1000 pae lepo-free aseptic hale hana hana, hoʻomaʻemaʻe a me ka pōʻai. |
7 | E ho'āʻo no ka 100% helium leakage. |
Komo loko | puka puka | |
1 | 1/8″ paipu paipu | 1/8″ paipu paipu |
2 | 1/4″ paipu paipu | 1/4″ paipu paipu |
3 | 3/8″ paipu paipu | 3/8″ paipu paipu |
4 | 1/2″ paipu paipu | 1/2″ paipu paipu |
5 | 6MM paipu paipu | 6MM paipu paipu |
6 | 8MM paipu paipu | 8MM paipu paipu |
7 | 10MM paipu paipu | 10MM paipu paipu |
8 | 12MM paipu paipu | 12MM paipu paipu |
9 | 1/8″ NPT Wahine | 1/8″ NPT Wahine |
10 | 1/4″ NPT Wahine | 1/4″ NPT Wahine |
11 | 1/4″ NPT kāne | 1/4″ NPT kāne |
12 | 3/8″ NPT kāne | 3/8″ NPT kāne |
13 | 1/2″ NPT kāne | 1/2″ NPT kāne |
Nā Anana Hana Hana Huahana o kāna kānana
1 | Kānana pololei | ≥0.0025μm | |
2 | Ka pono kānana | Laki wehe 99.99999%≥0.0025μm | |
3 | Kahe i helu ʻia | 15L/Min | |
4 | 60L/Min | ||
5 | 120L/Min | ||
6 | 200L/Min | ||
7 | 300L/Min | ||
8 | Hoʻopili kānana | mea kānana | 316L/PTFE |
9 | hale noho | kila kila 316L | |
10 | Kūlana hana | ʻO ke kaomi puka komo kiʻekiʻe | 21Mpa(310kgf/cm2) |
11 | ʻO ke kaomi ʻokoʻa kiʻekiʻe | 15Mpa(153kgf/cm2) | |
12 | ʻO ka wela hana kiʻekiʻe | 430 ℃ (keea kinoea) | |
13 | Helium leakage rate | 1×10-9 atm.cc/sec | |
14 | Hoʻopau ʻili | ≤Ra 5μin |